AlInP-GaInP-GaAs UV-enhanced photovoltaic detectors grown by gas source MBE

IEEE Photonics Technology Letters

Volumn 17, Issue 6, 2005, Pages 1265-1267

  Zhang, Y G ^a   Gu, Y ^a   Zhu, C ^a   Li, A Z ^a   Liu, T D ^a  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

AlInP GaInP; Molecular beam epitaxy (MBE); Photodetectors; Photovoltaic

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC POTENTIAL; LIGHT ABSORPTION; MOLECULAR BEAM EPITAXY; PHOTOVOLTAIC EFFECTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS;

GAS SOURCE MOLECULAR BEAM EPITAXY; PHOTOVOLTAIC DETECTORS;

PHOTODETECTORS;

EID: 20544462536     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2005.846485     Document Type: Article

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