Very low dark current InGaP/GaAs MSM-photodetector using semi-transparent and opaque contacts

Electronics Letters

Volumn 32, Issue 8, 1996, Pages 766-767

  Matin, M A ^a   Song, K C ^a   Robinson, B J ^a   Simmons, J G ^a   Thompson, D A ^a   Gouin, F ^b  

^a MCMASTER UNIVERSITY   (Canada)

^b Radio Science Branch   (Canada)

Author keywords

Metal semiconductor metal structures; Photodetectors

Indexed keywords

BANDWIDTH; CONTINUOUS WAVE LASERS; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; ELECTRIC NETWORK ANALYZERS; MOLECULAR BEAM EPITAXY; PHOTOLITHOGRAPHY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE;

ELECTRON BEAM EVAPORATION; GAS SOURCE MOLECULAR BEAM EPITAXY; OPAQUE CONTACT; SEMI TRANSPARENT CONTACT; SEMICONDUCTOR PARAMETER ANALYZER;

PHOTODETECTORS;

EID: 0030125752     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960473     Document Type: Article

References (6)

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2. ITO, M., and WADA, O.: 'Low dark current GaAs metal-semiconductor-metal (MSM) photodiodes using WSix contacts', IEEE J. Quantum Electron., 1986, QE-22, (7), pp. 1073-1077
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5. KIM, H., GRIEM, H.T., FRIEDMAN, R.A., CHAN, E.Y., and RAY, S.: 'High-performance back-illuminated InGaAs/InAlAs MSM phtodetector with a record responsivity of 0.96 A/W', IEEE Photonics. Technol. Lett., 1992, 4, (11), pp. 1241-1244
6. SEO, J.W., KETTERSON, A.A., BALLEGEER, D.G., CHENG, K.Y., and GESSERT, T.: 'A comparative study of metal-semiconductor-metal photodetectors on GaAs with indium-tin-oxide and Ti/Au electrode', IEEE Photonics. Technol. Lett., 1992, 4, pp. 888-890