High performances and reliability of novel GaAs MSM photodetectors with InGaP buffer and capping layers

IEEE Photonics Technology Letters

Volumn 9, Issue 5, 1997, Pages 660-662

  Tsai, Chang Da ^b   Shiao, Hung Pin ^b   Lee, Ching Ting ^a,b   Tu, Yuan Kuang ^c  

^a IEEE

^b NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^c CHUNGHWA TELECOM CO LTD   (Taiwan)

Author keywords

MSM diodes; Optoelectronic devices; Photodetectors; Schottky contacts

Indexed keywords

CURRENT DENSITY; ELECTRIC CONTACTS; ELECTRIC CURRENTS; ELECTRON ENERGY LEVELS; FREQUENCY RESPONSE; HETEROJUNCTIONS; OPTICAL MULTILAYERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE;

DARK CURRENTS; METAL SEMICONDUCTOR METAL (MSM) PHOTODETECTORS;

PHOTODETECTORS;

EID: 0031144138     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.588188     Document Type: Article

References (14)

1. V. Hurm, M. Ludwig, J. Rosenzweig, W. Benz, M. Berroth, R. Bosch, W. Bronner, A. Hulsmann, K. Kohler, B. Raynor, and J. Schneider, "14 GHz bandwidth MSM photodiode AlGaAs/GaAs HEMT monolithic integrated optoelectronic receiver," Electron. Lett., vol. 29, pp. 9-11, 1993.
2. J. H. Burroughes, "H-MESFET compatible GaAs/AlGaAs MSM photodetector," IEEE Photon. Technol. Lett., vol. 3, pp. 660-662, 1991.
3. J. Lu, R. Surridge, G. Pakulski, H. van Driel, and J. M. Xu, "Studies of high-speed metal-semiconductor-metal photodetector with a GaAs/AlGaAs/GaAs heterostructure," IEEE Trans. Electron Devices, vol. 40, pp. 1087-1092, 1993.
4. M. Ohkuho, T. Ijichi, A. Iketani, and T. Kikuta, "980 nm aluminum-free InGaAs/InGaAsP/InGaP GRIN-SCH SL-QW lasers," IEEE J. Quantum Electron., vol. 30, pp. 408-414, 1994.
5. F. Hyuga, T. Aoki, S. Sugitani, and K. Asai, "Si-implanted InGaP/GaAs metal-semiconductor field-effect transistors," Appl. Phys. Lett., vol. 60, pp. 1963-1965, 1992.
6. M. Takikawa, T. Ohori, M. Takechi, M. Suzuki, and J. Komeno, "Pseudomorphic N-InGaP/InGaAs/GaAs grown by OMVPE for HEMT LSI's," J. Cryst. Growth, vol. 107, pp. 942-946, 1991.
7. M. O. Watanabe and Y. Ohba, "Se-related deep levels in InGaAlP," J. Appl. Phys., vol. 60, pp. 1032-1037, 1986.
8. 0.5P/GaAs heterointerfaces," Appl. Phys. Lett., vol. 55, pp. 1208-1210, 1989.
9. H. P. Shiao, C. Y. Wang, Y. K. Tu, W. Lin, and C. T. Lee, "InGaP/GaAs multiquantum barrier structures prepared by low-pressure organometallic vapor phase epitaxy," Solid State Electron., vol. 38, pp. 2001-2004, 1995.
10. M. Kingenstein, J. Kuhl, J. Rosenzweig, C. Moglestue, A. Hulsmann, J. Schneider, and K. Kohler, "Photocurrent gain mechanisms in metalsemiconductor-metal photodetectors," Solid State Electron., vol. 37, pp. 333-340, 1994
11. J. Burm and L. F. Eastman, "Low-frequency gain in MSM photodiodes due to charge accumulation and image force lowing," IEEE Photon. Technol. Lett., vol. 8, pp. 113-115, 1996
12. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. New York: Wiley, 1981.
13. 4 and polymide," IEEE Trans. Electron Devices, vol. 35, pp. 1695-1696, 1988
14. K. Shiojima, K. Nishimura, T. Aoki, and F. Hyuga, "Large Schottky barriers formed on epitaxial InGaP grown on GaAs," J. Appl. Phys., vol. 77, pp. 390-392, 1995.