Mechanical stability of ultrathin GeSi film on Si O2: The effect of SiSi O2 interface

Journal of Applied Physics

Volumn 97, Issue 11, 2005, Pages

  Huang, Minghuang ^a   Nairn, John A ^a   Liu, Feng ^a   Lagally, M G ^b  

^a UNIVERSITY OF UTAH   (United States)

^b Wisconsin Electric Machines and Power Electronics Consortium   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACE SLIPPAGE; LARGE LOCAL BENDING; MECHANICAL STABILITY; METAL-OXIDE-SEMICONDUCTOR (MOS);

BENDING (DEFORMATION); INTERFACES (MATERIALS); MOS CAPACITORS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; STABILITY; STRAIN; SULFUR DIOXIDE;

SEMICONDUCTING FILMS;

EID: 20544452009     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1926421     Document Type: Article

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