Coupled drift-diffusion/quantum transmitting boundary method simulations of thin oxide devices with specific application to a silicon based tunnel switch diode

IEEE Transactions on Electron Devices

Volumn 47, Issue 5, 2000, Pages 1052-1060

  Daniel, Erik S ^a   Cartoixà, Xavier ^a   Frensley, William R ^a   Ting, David Z Y ^a   McGill, T C ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Drift diffusion; QTBM; Silicon; Simulation; SiO2; SRAM; TSD; Tunneling

Indexed keywords

EID: 0038080893     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.841240     Document Type: Article

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