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Journal of the European Ceramic Society

Volumn 25, Issue 12 SPEC. ISS., 2005, Pages 2253-2256

Ferroelectric properties of PZT films on LaNiO3 bottom electrode deposited under different oxygen partial pressure

(3) Kim, Heesan a Kim, J H a Choo, W K a

a Korea Advanced Institute of Science and Technology (KAIST) (South Korea)

Author keywords

Fatigue; Ferroelectric properties; LNO; Perovskite; PZT

Indexed keywords

ANNEALING; CURRENT DENSITY; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRODES; LEAKAGE CURRENTS; MAGNETRON SPUTTERING; MICROSTRUCTURE; REMANENCE; X RAY DIFFRACTION ANALYSIS;

FERROELECTRIC PROPERTIES; METAL CHIPS; OXYGEN PARTIAL PRESSURE; THIN FILM CAPACITORS;

FERROELECTRIC THIN FILMS;

FILM;

EID: 20444474972 PISSN: 09552219 EISSN: None Source Type: Journal
DOI: 10.1016/j.jeurceramsoc.2005.03.040 Document Type: Article

Times cited : (19)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.