Manipulation of 2D arrays of Si nanocrystals by ultra-low-energy ion beam-synthesis for nonvolatile memories applications

Materials Research Society Symposium Proceedings

Volumn 830, Issue , 2005, Pages 217-222

  Bonafos, C ^a   Cherkashin, N ^a,b   Carrada, M ^a,c   Coffin, H ^a   Assayag, G Ben ^a   Schamm, S ^a   Dimitrakis, P ^d   Normand, P ^d   Perego, M ^e   Fanciulli, M ^e   Muller, T ^f   Heinig, K H ^f   Argawal, A ^g   Claverie, A ^a  

^a CEMES CNRS   (France)

^b IOFFE INSTITUTE   (Russian Federation)

^c France   (France)

^d INSTITUTE OF NANOSCIENCE AND NANOTECHNOLOGY   (Greece)

^e LABORATORIO MDM   (Italy)

^f FZR   (Germany)

^g AXCELIS TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRON ENERGY LOSS SPECTROSCOPY; GATES (TRANSISTOR); HEAT TREATMENT; ION BEAMS; MOS DEVICES; NONVOLATILE STORAGE; PARTICLE SIZE ANALYSIS; SILICA; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

FLOATING-GATE SEMICONDUCTOR MEMORIES; FRESNEL IMAGING; SURFACE DENSITY; TWO DIMENSIONAL (2D) ARRAYS;

NANOSTRUCTURED MATERIALS;

EID: 20344396101     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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