Evidence for a type I to type II transition in (Ga,in)(N,As)/Ga(N,As) quantum well structures

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 21, Issue 2-4, 2004, Pages 666-670

  Gruning H ^a   Klar, P J ^a   Heimbrodt, W ^a   Nau, S ^a   Kunert, B ^a   Volz, K ^a   Stolz, W ^a   Weiser, G ^a  

^a PHILIPPS UNIVERSITY MARBURG   (Germany)

Author keywords

Band alignment; Dilute nitrides; GaInNAs; Type I to type II transition

Indexed keywords

ABSORPTION; ELECTRIC FIELDS; MATHEMATICAL MODELS; METALLORGANIC VAPOR PHASE EPITAXY; REFLECTION; SEMICONDUCTING GALLIUM; TENSILE STRENGTH;

BAND ALIGNMENT; DILUTE NITRIDES; GAINNAS; TYPE I TO TYPE II TRANSITIONS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 1642409768     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2003.11.100     Document Type: Conference Paper

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