SCOPUS 정보 검색 플랫폼

Volumn 7, Issue , 2004, Pages 123-134

Epitaxially strained SiGe process to improve mobility in the PMOS transistor

(13) Chidambaram, P c Smith, B c Hall, L c Bu, H c Chakravarthi, S c Kim, Y a Samoilov, A a Kim, A c Jones, P c Irwin, R c Kim, M b Machala, C c Grider, D c

a APPLIED MATERIALS INC (United States)

b UNIVERSITY OF TEXAS AT DALLAS (United States)

c TEXAS INSTRUMENTS (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL STRAIN TENSOR; CONVERGENT BEAM ELECTRON DIFFRACTION (CBED); EPITAXIAL STRAIN APPROACH; SILICON GERMANIUM (SIGE);

BINARY ALLOYS; CMOS INTEGRATED CIRCUITS; ELECTRON MOBILITY; HOLE MOBILITY; LATTICE CONSTANTS; PHASE DIAGRAMS; SILICON ALLOYS; TRANSMISSION ELECTRON MICROSCOPY;

MOSFET DEVICES;

EID: 20144388850 PISSN: None EISSN: None Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper

Times cited : (1)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.