Analysis of the steady-state photocarrier grating method for the determination of the density of states in semiconductors

Physical Review B - Condensed Matter and Materials Physics

Volumn 71, Issue 12, 2005, Pages

  Schmidt, J A ^a   Longeaud, C ^b  

^a UNIVERSIDAD NACIONAL DEL LITORAL   (Argentina)

^b UNIV PARIS SUD   (France)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON;

ACCURACY; ARTICLE; COMPARATIVE STUDY; DENSITY; ELECTRON; GRATING; SEMICONDUCTOR; STEADY STATE; TRANSPORT KINETICS;

EID: 20144384003     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.71.125208     Document Type: Article

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