Ambipolar diffusion length and photoconductivity measurements on "midgap" hydrogenated microcrystalline silicon

Journal of Applied Physics

Volumn 80, Issue 9, 1996, Pages 5111-5115

  Goerlitzer, M ^a   Beck, N ^a   Torres, P ^a   Meier, J ^a   Wyrsch, N ^a   Shah, A ^a  

^a UNIVERSITY OF NEUCHÂTEL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CHEMICAL VAPOR DEPOSITION; CRYSTALLINE MATERIALS; DIFFUSION; ELECTRIC CONDUCTIVITY MEASUREMENT; FERMI LEVEL; PHOTOCONDUCTIVITY;

AMBIPOLAR DIFFUSION LENGTH; DILUTION; HYDROGENATED MICROCRYSTALLINE SILICON; POWER LAW; STEADY STATE PHOTOCARRIER GRATING;

SILICON;

EID: 0030283676     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363491     Document Type: Article

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