Studies of single-event transient current induced in GaAs and Si diodes by energetic heavy ions

Radiation Physics and Chemistry

Volumn 60, Issue 4-5, 2001, Pages 269-272

  Hirao, Toshio ^a   Itoh, Hisayoshi ^a   Okada, Sohei ^a   Nashiyama, Isamu ^a  

^a JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

Heavy ion microbeam; Radiation damage; Single event upset

Indexed keywords

DIODES; HEAVY IONS; OXYGEN; TRANSIENTS;

SINGLE-EVENT UPSET (SEU) TOLERANCE;

RADIATION CHEMISTRY;

GALLIUM ARSENIDE; HEAVY ION; OXYGEN; SILICON;

ANALYTIC METHOD; COMPARATIVE STUDY; CONFERENCE PAPER; DEVICE; DIODE; ELECTRIC CURRENT; ELECTRIC FIELD; ELECTRIC RESISTANCE; RADIATION MEASUREMENT; SEMICONDUCTOR; VELOCITY;

EID: 0035088281     PISSN: 0969806X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0969-806X(00)00360-1     Document Type: Conference Paper

References (8)

1. Effect of micro-beam induced damage on single-event current measurements
2. Effect of ion position on single-event transient current
3. Microbeam system for study of single event upset semiconductor devices
4. Single-event current transients induced by high energy ion microbeams
5. TIARA electrostatic accelerators for multiple ion beam application
6. Effects of ion damage on IBICC and SEU imaging
7. Alpha-, boron-, silicon- and iron-ion induced current transients in low-capacitance silicon and GaAs diodes