Kinetic roughening of charge spreading in a two-dimensional silicon nanocrystal network detected by electrostatic force microscopy

Physical Review B - Condensed Matter and Materials Physics

Volumn 71, Issue 12, 2005, Pages

  Dianoux, R ^a,b   Smilde, H J H ^b   Marchi, F ^c,d   Buffet, N ^b   Mur, P ^b   Comin, F ^a   Chevrier, J ^a,c,d  

^a EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

^b CEA GRENOBLE   (France)

^c LABORATOIRE DE CRISTALLOGRAPHIE   (France)

^d UNIV GRENOBLE ALPES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

OXYGEN; SILICON;

ARTICLE; CHEMICAL REACTION; CHEMICAL STRUCTURE; COATED PARTICLE; ELECTRIC CONDUCTIVITY; ELECTRON TRANSPORT; ELECTROSPRAY MASS SPECTROMETRY; MOLECULAR DYNAMICS; NANOPARTICLE; REACTION ANALYSIS; STRUCTURE ANALYSIS;

EID: 20044379646     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.71.125303     Document Type: Article

References (33)

1. M. E. Castagna, S. Coffa, M. Monaco, L. Caristia, A. Messina, R. Mangano, and C. Bongiorno, Physica E (Amsterdam) 16, 547 (2003).
2. J. De La Torre et al., Physica E (Amsterdam) 16, 326 (2003).
3. S. Tiwari, F. Rana, H. Hanafi, A. Hartstein, E. F. Crabbe, and K. Chan, Appl. Phys. Lett. 68, 1377 (1996).
4. A. Kohno, H. Murakami, M. Ikeda, S. Miyazaki, and M. Hirose, Jpn. J. Appl. Phys., Part 2 40, L721 (2001).
5. S. Banerjee, S. Huang, T. Yamanaka, and S. Oda, J. Vac. Sci. Technol. B 20, 1135 (2002).
6. M. Kardar, G. Parisi, and Y. C. Zhang, Phys. Rev. Lett. 56, 889 (1986).
7. J. Maunuksela, M. Myllys, O. P. Kahkonen, J. Timonen, N. Provatas, M. J. Alava, and T. Ala-Nissila, Phys. Rev. Lett. 79, 1515 (1997).
8. S. Vézian, F. Natali, F. Semond, and J. Massies, Phys. Rev. B 69, 125329 (2004).
9. G. Binnig, C. F. Quate, and C. Gerber, Phys. Rev. Lett. 56, 930 (1986).
10. B. D. Terris, J. E. Stern, D. Rugar, and H. J. Mamin, Phys. Rev. Lett. 63, 2669 (1989).
11. C. Schönenberger, Phys. Rev. B 45, 3861 (1992).
12. R. C. Barrett and C. F. Quate, J. Appl. Phys. 70, 2725 (1991).
13. K. Domansky, Y. Leng, C. C. Williams, J. Janata, and D. Petelenz, Appl. Phys. Lett. 63, 1513 (1993).
14. Y. Sugawara, Y. Fukano, T. Uchihashi, T. Okusako, S. Morita, Y. Yamanishi, T. Oasa, and T. Okada, J. Vac. Sci. Technol. B 12, 1627 (1994).
15. C. Guillemot, P. Budeau, J. Chevrier, F. Marchi, F. Comin, C. Alandi, F. Bertin, N. Buffet, C. Wyon, and P. Mur, Europhys. Lett. 59, 566 (2002).
16. D. M. Schaadt, E. T. Yu, S. Sankar, and A. E. Berkowitz, Appl. Phys. Lett. 74, 472 (1999).
17. N. Shimizu, M. Ikeda, E. Yoshida, H. Murakami, S. Miyazaki, and M. Hirose, Jpn. J. Appl. Phys., Part 1 39, 2318 (2000).
18. E. A. Boer, L. D. Bell, M. L. Brongersma, H. A. Atwater, M. L. Ostraat, and R. C. Flagan, Appl. Phys. Lett. 78, 3133 (2001).
19. T. Mélin, D. Deresmes, and D. Stiévenard, Appl. Phys. Lett. 81, 5054 (2002).
20. L. J. Klein and C. C. Williams, Appl. Phys. Lett. 81, 4589 (2002).
21. M. L. Hitchman and J. Kane, J. Cryst. Growth 55, 485 (1981).
22. W. Y. Ching, Phys. Rev. B 26, 6610 (1982).
23. N. Buffet, P. Mur, B. De Salvo, and M. N. Sémeria, Proceedings of the IEEE Conference on Nanotechnology, 26-28 August 2002, Washington, DC, USA, p. 269-272.
24. Dimension 3100, Nanoscope III AFM from Veeco Instruments, Santa Barbara, CA, USA.
25. MikroMasch, Tallinn, Estonia.
26. D. Sarid, Scanning Force Microscopy (Oxford University Press, New York, 1994).
27. M. W. Nelson, P. G. Schroeder, R. Schlaf, and B. A. Parkinson, J. Vac. Sci. Technol. B 17, 1354 (1999).
28. K. K. Likharev, IBM J. Res. Dev. 32, 144 (1988).
29. A. A. Middleton and N. S. Wingreen, Phys. Rev. Lett. 71, 3198 (1993).
30. J. Lambert, G. De Loubens, T. Mélin, C. Guthmann, and M. Saint-Jean, Phys. Rev. B (to be published).
31. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981).
32. J. Chevrier, V. Le Thanh, R. Buys, and J. Derrien, Europhys. Lett. 8, 737 (1991).
33. A. Pimpinelli and J. Villain, Physics of Crystal Growth (Cambridge University Press, Cambridge, U.K., 1998).