Characterization of Si1-x Gex Si layers and depth profile of their heterobipolar transistor structures by high-resolution x-ray diffractometry and computer simulations

Journal of Applied Physics

Volumn 97, Issue 2, 2005, Pages

  Bhagavannarayana, G ^a   Halder, S K ^a  

^a NATIONAL PHYSICAL LABORATORY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROBIPOLAR TRANSISTORS (HBT); HIGH-RESOLUTION X-RAY DIFFRACTOMETRY (HRXRD); ROCKING CURVES (RC); SOFTWARE PROGRAMS;

COMPUTER PROGRAMMING; COMPUTER SIMULATION; DIFFRACTOMETERS; HETEROJUNCTION BIPOLAR TRANSISTORS; LATTICE CONSTANTS; LIGHT POLARIZATION; LIGHT REFLECTION; MOLECULAR BEAM EPITAXY; RELAXATION PROCESSES; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; SOFTWARE ENGINEERING; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 19944432728     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1836008     Document Type: Article

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