Activation behavior of boron and phosphorus atoms implanted in polycrystalline silicon films by heat treatment at 250°C

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 3, 2005, Pages 1186-1191

  Sameshima, Toshiyuki ^a   Andoh, Nobuyuki ^a   Andoh, Yasunori ^b  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

^b NISSIN ION EQUIPMENT CO LTD   (Japan)

Author keywords

Ion doping; Laser polycrystalline silicon; Low temperature activation; Recrystallization

Indexed keywords

BORON; DOPING (ADDITIVES); HEAT TREATMENT; ION IMPLANTATION; PHOSPHORUS; POLYCRYSTALLINE MATERIALS; RECRYSTALLIZATION (METALLURGY); SILICON;

ION DOPING; LASER POLYCRYSTALLINE SILICON; LOW-TEMPERATURE ACTIVATION; RECRYSTALLIZATION;

THIN FILMS;

EID: 19944362227     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.1186     Document Type: Article

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