-
1
-
-
0242609390
-
CD-SEM measurement line edge roughness test patterns for 193 nm lithography
-
Benjamin D. Bunday, Bishop, Michael, Villarrubia, John S., Vladar, Andras E., CD-SEM measurement line edge roughness test patterns for 193 nm lithography, Proceedings of the SPIE, Volume 5041, pp. 127-141 (2003).
-
(2003)
Proceedings of the SPIE
, vol.5041
, pp. 127-141
-
-
Bunday, B.D.1
Bishop, M.2
Villarrubia, J.S.3
Vladar, A.E.4
-
2
-
-
0036030582
-
Amplitude and spatial frequency characterization of line-edge roughness using CD-SEM
-
Metrology, Inspection, and Process Control for Microlithography XVI
-
Eytan, Guy, Dror, Ophir, Ithier, Laurent, Florin, Brigitte, Lamouchi, Zakir, Martin, Nadine, Amplitude and spatial frequency characterization of line-edge roughness using CD-SEM, Proc. SPIE Vol. 4689, p. 347-355, Metrology, Inspection, and Process Control for Microlithography XVI,
-
Proc. SPIE
, vol.4689
, pp. 347-355
-
-
Eytan, G.1
Dror, O.2
Ithier, L.3
Florin, B.4
Lamouchi, Z.5
Martin, N.6
-
3
-
-
0035519476
-
Resist line-edge roughness and aerial image contrast
-
November
-
J. Shin, G. Han, and Y. Ma, K. Moloni, Franco Cerrina, Resist line-edge roughness and aerial image contrast, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures - November 2001 - Volume 19, Issue 6, pp. 2890-2895
-
(2001)
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
, vol.19
, Issue.6
, pp. 2890-2895
-
-
Shin, J.1
Han, G.2
Ma, Y.3
Moloni, K.4
Cerrina, F.5
-
4
-
-
0141834755
-
Enhanced, quantities analysis of resist image contrast upon line edge roughness (LER)
-
Mike Williamson and Andrew Neureuther, Enhanced, quantities analysis of resist image contrast upon line edge roughness (LER), Proceedings of the SPIE, Volume 5039, pp. 423-432 (2003).
-
(2003)
Proceedings of the SPIE
, vol.5039
, pp. 423-432
-
-
Williamson, M.1
Neureuther, A.2
-
5
-
-
0032625410
-
Aerial Image contrast using interferometric lithography: Effect on line-edge roughness
-
Sanchez, M.I. et al, Aerial Image contrast using interferometric lithography: effect on line-edge roughness, Proceedings of SPIE, 3678, pt.1-2, 160-71 (1999).
-
(1999)
Proceedings of SPIE
, vol.3678
, Issue.1-2 PART
, pp. 160-171
-
-
Sanchez, M.I.1
-
6
-
-
0032624334
-
Methodology of modeling and simulating line-end shortening in deep-UV resist
-
M. Cheng et al, Methodology of Modeling and Simulating Line-End Shortening in Deep-UV resist, Proceedings of SPIE, 3678, pt.1-2, 867 (1999).
-
(1999)
Proceedings of SPIE
, vol.3678
, Issue.1-2 PART
, pp. 867
-
-
Cheng, M.1
-
7
-
-
0036030914
-
A study of the effects of image contrast and resist types upon line edge roughness
-
M. Williamson, X. Meng, and A. Neureuther, A Study of the Effects of Image Contrast and resist Types Upon Line Edge Roughness, Proc SPIE Microlithography (2002)
-
(2002)
Proc SPIE Microlithography
-
-
Williamson, M.1
Meng, X.2
Neureuther, A.3
-
8
-
-
19844382843
-
A new approach for reducing line-edge roughness by using a cross-linked positive-tone resist
-
Yamaguchi, T. Namatsu, H. Nagase, M. Yamazaki, K. Kurihara, K.; A new approach for reducing line-edge roughness by using a cross-linked positive-tone resist, Microprocesses and Nanotechnology Conference, 1999, 158-159
-
(1999)
Microprocesses and Nanotechnology Conference
, pp. 158-159
-
-
Yamaguchi, T.1
Namatsu, H.2
Nagase, M.3
Yamazaki, K.4
Kurihara, K.5
-
9
-
-
0141500085
-
Resist requirements in the era of resolution enhancement techniques
-
John S. Petersen, Jeffrey D. Byers, Resist requirements in the era of resolution enhancement techniques, Proc. SPIE Vol. 5039, p. 15-21.
-
Proc. SPIE
, vol.5039
, pp. 15-21
-
-
Petersen, J.S.1
Byers, J.D.2
-
10
-
-
19844378084
-
Automatic calibration of lithography simulation parameters using multiple data sets
-
Jug
-
J. Byers, C. Mack, R. Huang, S., Automatic calibration of lithography simulation parameters using multiple data sets, Jug, Proc. Micro and Nano-Engineering (2002).
-
(2002)
Proc. Micro and Nano-engineering
-
-
Byers, J.1
Mack, C.2
Huang, R.3
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