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Volumn 5567, Issue PART 2, 2004, Pages 1323-1331

LER characterization and impact on 0.13um lithography for OPC modeling

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; COMPUTER SIMULATION; DATA ACQUISITION; DATA REDUCTION; IMAGE ANALYSIS; PHOTORESISTS; POLYSILICON; SCANNING ELECTRON MICROSCOPY;

EID: 19844374703     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.568999     Document Type: Conference Paper
Times cited : (2)

References (10)
  • 1
    • 0242609390 scopus 로고    scopus 로고
    • CD-SEM measurement line edge roughness test patterns for 193 nm lithography
    • Benjamin D. Bunday, Bishop, Michael, Villarrubia, John S., Vladar, Andras E., CD-SEM measurement line edge roughness test patterns for 193 nm lithography, Proceedings of the SPIE, Volume 5041, pp. 127-141 (2003).
    • (2003) Proceedings of the SPIE , vol.5041 , pp. 127-141
    • Bunday, B.D.1    Bishop, M.2    Villarrubia, J.S.3    Vladar, A.E.4
  • 2
    • 0036030582 scopus 로고    scopus 로고
    • Amplitude and spatial frequency characterization of line-edge roughness using CD-SEM
    • Metrology, Inspection, and Process Control for Microlithography XVI
    • Eytan, Guy, Dror, Ophir, Ithier, Laurent, Florin, Brigitte, Lamouchi, Zakir, Martin, Nadine, Amplitude and spatial frequency characterization of line-edge roughness using CD-SEM, Proc. SPIE Vol. 4689, p. 347-355, Metrology, Inspection, and Process Control for Microlithography XVI,
    • Proc. SPIE , vol.4689 , pp. 347-355
    • Eytan, G.1    Dror, O.2    Ithier, L.3    Florin, B.4    Lamouchi, Z.5    Martin, N.6
  • 4
    • 0141834755 scopus 로고    scopus 로고
    • Enhanced, quantities analysis of resist image contrast upon line edge roughness (LER)
    • Mike Williamson and Andrew Neureuther, Enhanced, quantities analysis of resist image contrast upon line edge roughness (LER), Proceedings of the SPIE, Volume 5039, pp. 423-432 (2003).
    • (2003) Proceedings of the SPIE , vol.5039 , pp. 423-432
    • Williamson, M.1    Neureuther, A.2
  • 5
    • 0032625410 scopus 로고    scopus 로고
    • Aerial Image contrast using interferometric lithography: Effect on line-edge roughness
    • Sanchez, M.I. et al, Aerial Image contrast using interferometric lithography: effect on line-edge roughness, Proceedings of SPIE, 3678, pt.1-2, 160-71 (1999).
    • (1999) Proceedings of SPIE , vol.3678 , Issue.1-2 PART , pp. 160-171
    • Sanchez, M.I.1
  • 6
    • 0032624334 scopus 로고    scopus 로고
    • Methodology of modeling and simulating line-end shortening in deep-UV resist
    • M. Cheng et al, Methodology of Modeling and Simulating Line-End Shortening in Deep-UV resist, Proceedings of SPIE, 3678, pt.1-2, 867 (1999).
    • (1999) Proceedings of SPIE , vol.3678 , Issue.1-2 PART , pp. 867
    • Cheng, M.1
  • 7
    • 0036030914 scopus 로고    scopus 로고
    • A study of the effects of image contrast and resist types upon line edge roughness
    • M. Williamson, X. Meng, and A. Neureuther, A Study of the Effects of Image Contrast and resist Types Upon Line Edge Roughness, Proc SPIE Microlithography (2002)
    • (2002) Proc SPIE Microlithography
    • Williamson, M.1    Meng, X.2    Neureuther, A.3
  • 9
    • 0141500085 scopus 로고    scopus 로고
    • Resist requirements in the era of resolution enhancement techniques
    • John S. Petersen, Jeffrey D. Byers, Resist requirements in the era of resolution enhancement techniques, Proc. SPIE Vol. 5039, p. 15-21.
    • Proc. SPIE , vol.5039 , pp. 15-21
    • Petersen, J.S.1    Byers, J.D.2
  • 10
    • 19844378084 scopus 로고    scopus 로고
    • Automatic calibration of lithography simulation parameters using multiple data sets
    • Jug
    • J. Byers, C. Mack, R. Huang, S., Automatic calibration of lithography simulation parameters using multiple data sets, Jug, Proc. Micro and Nano-Engineering (2002).
    • (2002) Proc. Micro and Nano-engineering
    • Byers, J.1    Mack, C.2    Huang, R.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.