CD-SEM Measurement of Line Edge Roughness Test Patterns for 193 nm Lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5041, Issue , 2003, Pages 127-141

  Bunday, Benjamin D ^a   Bishop, Michael ^a   Villarrubia, John S ^b   Vladár, András E ^b  

^a SEMATECH   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION IN SOLIDS; GATES (TRANSISTOR); MOSFET DEVICES; PHOTOLITHOGRAPHY; POLYSILICON; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DOPING;

CRITICAL DIMENSION (CD); LINE-EDGE ROUGHNESS (LER);

INTEGRATED CIRCUITS;

EID: 0242609390     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.485234     Document Type: Conference Paper

References (8)

1. Xiong, S., Bokor, J. "Study of Line Edge Roughness in 50 nm Built MOSFET Devices." Proceedings of SPIE 2002, 4689: p733-741.
2. Diaz, C., Tao, H., Ku, Y., Yen, A., Yound, K. "An Experimentally Validated Analytical Model for Gate Line-Edge Roughness (LER) Effects on Technology Scaling." IEEE Electron Device Letters, v.22, No 6: June, 2001, p287-289.
3. Ercken, M., Storms, G., Delvaux, C., Vandenbroeck, N., Leunissen, P., Pollentier, I. "Line Edge Roughness and its Increasing Importance." Proceedings of ARCH Interface 2002.
4. International Technology Roadmap for Semiconductors (ITRS), 2001 Edition, http://member.itrs.net.
5. Eytan, G., Dror, O., Ithier, L., Florin, B., Lamouchi, Z., Martin, N. "Amplitude and Spatial Frequency Characterization of Line Edge Roughness using CD-SEM." Proceedings of SPIE 2002, 4689: p347-355.
6. Meessen, J., Blok, F., Linders, J., Schenau, K., Wong, P., Cramer, H. "Reduction of the Influence of Line Edge Roughness on CD SEM Measurements Using an Extended Measurement Box." Proceedings of ARCH Interface 2002.
7. Villarrubia, J. S., Vladár, A. E., and Postek, M. T., "A Simulation Study of Repeatability and Bias in the CD-SEM," Proc. SPIE 5038, 2003, to be published.
8. Certain commercial products are identified in this report in order to describe the experimental and analytical procedures adequately. Such identification does not imply recommendation or endorsement by NIST or International SEMATECH, nor does it imply that the items identified are necessarily the best available for the purpose.