A new approach for reducing line-edge roughness by using a cross-linked positive-tone resist

1999 International Microprocesses and Nanotechnology Conference

Volumn , Issue , 1999, Pages 158-159

  Yamaguchi, Toru ^a   Namatsu, Hideo ^a   Nagase, Masao ^a   Yamazaki, Kenji ^a   Kurihara, Kenji ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

NANOTECHNOLOGY; PHOTORESISTS;

DEVICE CHARACTERISTICS; LINE EDGE ROUGHNESS; NEW APPROACHES; POSITIVE-TONE RESISTS; RESIST PATTERN; SUB-100 NM LITHOGRAPHY;

ROUGHNESS MEASUREMENT;

EID: 19844382843     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IMNC.1999.797525     Document Type: Conference Paper

References (3)

1. T. Yamaguchi et al., Appl. Phys. Lett. 71, 2388 (1997).
2. T. Yamaguchi et al., Proc. SPIE 3333, 830 (1998).
3. H. Namatsu et al., J. Vac. Sci. Technol., B16, 331 (1998).