Electric-field-enhanced electron capture coefficient of EL2 level in semi-insulating GaAs

Applied Physics Letters

Volumn 86, Issue 1, 2005, Pages

  Kiyama, M ^a,b   Tatsumi, M ^a   Yamada, M ^b  

^a SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

^b KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFERENTIAL EQUATIONS; ELECTRIC FIELDS; ELECTRONS; LIGHT POLARIZATION; MATHEMATICAL MODELS; MESFET DEVICES; MICROWAVES; NONLINEAR SYSTEMS; WIRELESS TELECOMMUNICATION SYSTEMS;

BOLTZMANN CONSTANT; MOBILE PHONES; NEGATIVE DIFFERENTIAL RESISTANCE (NDR); TRANSFERRED-ELECTRON EFFECTS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 19744383620     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1844040     Document Type: Article

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