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Volumn 12, Issue 11, 1997, Pages 1358-1364

An extended drift-diffusion model of semi-insulating n-GaAs Schottky-barrier diodes

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0000863463     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/12/11/006     Document Type: Article
Times cited : (25)

References (29)
  • 6
    • 5244254153 scopus 로고    scopus 로고
    • note
    • The diodes are manufactured by the Italian Company Alenia SpA, Via Triburtina Km. 12.400, I-00131 Rome, Italy
  • 22
    • 0009993759 scopus 로고    scopus 로고
    • ed P Pelfer et al (Singapore: World Scientific)
    • Cola A 1996 GaAs and Related Compounds ed P Pelfer et al (Singapore: World Scientific) p 217
    • (1996) GaAs and Related Compounds , pp. 217
    • Cola, A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.