Raman spectroscopy of Si 1-x-y Ge x C y layers obtained by pulsed laser induced epitaxy

Applied Surface Science

Volumn 106, Issue , 1996, Pages 171-178

  Finkman, E ^a   Boulmer, J ^b   Boucaud, P ^b   Guedj, C ^b   Bouchier, D ^b   Nugent, K ^c   Prawer, S ^c  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^b UNIVERSITÉ PARIS SACLAY   (France)

^c UNIVERSITY OF MELBOURNE   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; ANNEALING; EPITAXIAL GROWTH; HETEROJUNCTIONS; LASER BEAM EFFECTS; RAMAN SCATTERING; RAMAN SPECTROSCOPY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; X RAY DIFFRACTION;

PULSED LASER INDUCED EPITAXY (PLIE);

PULSED LASER APPLICATIONS;

EID: 0030566044     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)00415-1     Document Type: Article

References (24)

1. E. Kasper, Phys. Scr. T35 (1990) 232.
2. E. Kasper, H. Kibbel, H.J. Herzog and A. Gruhle, Jpn. J. Appl. Phys. 1, 33 (1994) 2415.
3. R. People, IEEE J. Quantum Electron. QE-22 (1986) 1696.
4. Z. Atzmon, A.E. Bair, E.J. Jaquez, J.W. Mayer, D. Chanrasehkar, D.J. Smith, R.L. Hervig and M.D. Robinson, Appl. Phys. Lett. 65 (1994) 2559.
5. J.L. Regolini, S. Bondar, J.C. Oberlin, F. Ferrieu, M. Gauneau, B. Lambert and P. Boucaud, J. Vac. Sci. Technol. A 12 (1994) 1015.
6. E. Kasper and F. Schaffler, in: Semiconductors and Semimetals, Vol. 33, Ed. T.P. Pearsall (Academic Press, New York, 1991) pp. 223-309.
7. A.R. Powel, K. Eberl, F.E. Legues, B.A. Ek and S.S. Iyer, J. Vac. Sci. Technol. B 11 (1993) 1064.
8. K. Eberl, S.S. Iyer, S. Zollner, J.C. Tsang and F.K. Legoues, Appl. Phys. Lett. 60 (1992) 3033.
9. H.J. Osten, E. Bugiel and P. Zaumseil, Appl. Phys. Lett. 64 (1994) 3440.
10. J.W. Strane, H.J. Stein, S.R. Lee, B.L. Doil, S.T. Picraux and J.W. Mayer, Appl. Phys. Lett 63 (1993) 2786.
11. C.W. White and P.S. Peercy, Eds., Laser and Electron Beam Processing of Materials (Academic Press, New York, 1980).
12. A.G. Cullis, R. Series, H.C. Webber and N.G. Chew, in: Semiconductor Silicon, Ed. H.R. Huff, R.J. Kriegler and Y. Takeishi (Electrochemical Society, Pennington, NJ, 1981) p. 518.
13. K.-J. Kramer, S. Talwar, E. Ishida, K.H. Weiner and T.W. Sigmon, Appl. Surf. Sci. 69 (1993) 121.
14. E. Fogarassy, D. Dentel, J.J. Grob, B. Prevot, J.-P. Stoquert and R. Stuck, Proc. of the MRS fall meeting, Boston, 1994, to be published.
15. J. Boulmer, A. Desmur-Larre, C. Guedj, D. Deberre, P. Boucaud, F.H. Julien, E. Finkman, K. Nugent, R. Lavai, J.-B. Ozenne, H. Yang, D. Bouchier, C. Godet, P. Roca i Cabarrocas, G. Calvarin and C. Clerc, in: Laser Induced Thin Film Processing, Ed. I. Dubrowski, Proc. SPIE 2403 (1995) p. 362.
16. P. Boucaud, G. Glowacki, Y. Campidelli, A. Larre, F. Ferrieu and D. Bensahel, J. Electron. Mater. 23 (1994) 565.
17. P. Roca i Cabarrocas, J.-B. Chevrier, J. Huc, A. Lloret, J.-Y. Parey and J.P.M. Schmitt, J. Vac. Sci. Technol. A 9 (1991) 2331.
18. J.S. Berar, G. Calvarin and D. Weigel, J. Appl. Cryst. 13 (1980) 201.
19. M.I. Alonso and K. Winer, Phys. Rev. B 39 (1989) 10056.
20. J.C. Tsang, P.M. Mooney, F. Dacol and J.O. Chu, J. Appl. Phys. 75 (1994) 8098.
21. J.C. Tsang, K. Eberl, S. Zollner and S.S. Iyer, Appl. Phys. Lett. 61 (1992) 961.
22. B. Dietrich, H.J. Osten, H. Rucker, M. Methfessel and P. Zaumseil, Phys. Rev. B 49 (1994) 17185.
23. J. Menendez, P. Gopalan, G.S. Spencer, N. Cave and J.W. Strane, Appl. Phys. Lett. 66 (1995) 1160.
24. J.W. Strane, H.J. Stein, S.R. Lee, B.L. Doyle, S.T. Picraux and J.W. Mayer, Appl. Phys. Lett, 63 (1993) 2786.