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Volumn 93, Issue 11, 2004, Pages

Photoinduced structural instability of the InP (110)-(1 × 1) surface

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; DEMODULATION; DESORPTION; ELECTRIC EXCITATION; IONIZATION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR MATERIALS; STABILITY;

EID: 19644396585     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.93.117401     Document Type: Article
Times cited : (15)

References (18)
  • 12
    • 85088492427 scopus 로고    scopus 로고
    • note
    • -2).
  • 16
    • 33744685518 scopus 로고
    • -2) is the total number of surface bonds, and W (≈2 eV) is the band width of the two-dimensional motion of free holes. W was taken to be the width of the heavy-hole valence band along the Γ-X points [J.R. Chelikowski and M. L. Cohen, Phys. Rev. B 14, 556 (1976)].
    • (1976) Phys. Rev. B , vol.14 , pp. 556
    • Chelikowski, J.R.1    Cohen, M.L.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.