Bond rupture of threefold-coordinated Si atoms at intrinsic sites on the Si( 1 1 1 )-( 2 × 1 ) induced by 1.16-eV photon excitation

Surface Science

Volumn 540, Issue 1, 2003, Pages

  Inami, E ^a   Ishikawa, K ^a   Tanimura, K ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

Desorption induced by electronic transitions (DIET); Laser methods; Photochemistry; Scanning tunneling microscopy; Silicon; Surface defects

Indexed keywords

CHEMICAL BONDS; MORPHOLOGY; PHOTONS; SCANNING TUNNELING MICROSCOPY; ULTRAHIGH VACUUM;

BOND RUPTURE;

SEMICONDUCTING SILICON;

EID: 0043267444     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(03)00797-0     Document Type: Article

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