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Volumn 5, Issue , 2003, Pages 51-56

Fabrication of piezoelectric AL0.3GA0.7AS heterostructures

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; HETEROJUNCTIONS; INDUCTIVELY COUPLED PLASMA; MICROACTUATORS; MICROSENSORS; MOLECULAR BEAM EPITAXY; OPTIMIZATION; PIEZOELECTRIC DEVICES; PIEZOELECTRIC TRANSDUCERS; REACTIVE ION ETCHING; SEMICONDUCTING ALUMINUM COMPOUNDS; SINGLE CRYSTALS;

EID: 1942520363     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1115/imece2003-41601     Document Type: Conference Paper
Times cited : (1)

References (20)
  • 1
    • 0028517565 scopus 로고
    • Characterization of AlGaAS microstructure fabricated by AlGaAs/GaAs micromachining
    • Uneshi Y., Tanaka H., and Ukita H., 1994, "Characterization of AlGaAS microstructure fabricated by AlGaAs/GaAs micromachining," IEEE Trans. Elec. Dev., v.41, n.10, pp 1778.
    • (1994) IEEE Trans. Elec. Dev. , vol.41 , Issue.10 , pp. 1778
    • Uneshi, Y.1    Tanaka, H.2    Ukita, H.3
  • 2
    • 0030370262 scopus 로고    scopus 로고
    • Sacrificial etching of III-V compounds for micromechanical devices
    • Hjort K., 1996, "Sacrificial etching of III-V compounds for micromechanical devices," J Micromech. Micoeng., v.6, pp 370.
    • (1996) J Micromech. Micoeng. , vol.6 , pp. 370
    • Hjort, K.1
  • 3
    • 77951592423 scopus 로고
    • AlGaAs/GaAs micromachining for monolithic integration of optical and mechanical components
    • Uenishi Y., Tanaka H., Ukita H., 1994, "AlGaAs/GaAs micromachining for monolithic integration of optical and mechanical components," Proc. SPIE, v.2291, pp 82.
    • (1994) Proc. SPIE , vol.2291 , pp. 82
    • Uenishi, Y.1    Tanaka, H.2    Ukita, H.3
  • 5
    • 84903582193 scopus 로고    scopus 로고
    • Micromechanics in Indium Phosphide for Opto Electrical Applications
    • K. Hjort, 1997, "Micromechanics in Indium Phosphide for Opto Electrical Applications," IEEE, Trans. Letter, v.3, pp1130.
    • (1997) IEEE, Trans. Letter , vol.3 , pp. 1130
    • Hjort, K.1
  • 6
    • 0032672397 scopus 로고    scopus 로고
    • III-V Semiconductor -Based MOEMS
    • Paris France
    • Viktorovitch P., 1999, "III-V Semiconductor -Based MOEMS," SPIE, Paris France, v.3680, pp 30.
    • (1999) SPIE , vol.3680 , pp. 30
    • Viktorovitch, P.1
  • 7
    • 0026387982 scopus 로고
    • Micromachining processes and structures in micro optics and optoelectronics
    • Deimel P.P., 1991, "Micromachining processes and structures in micro optics and optoelectronics," J. Micromech. Microeng., v.1, n.4, pp 199.
    • (1991) J. Micromech. Microeng. , vol.1 , Issue.4 , pp. 199
    • Deimel, P.P.1
  • 8
    • 0029325790 scopus 로고
    • A piezoresistive GaAs pressure sensors with GaAs/AlGaAs membrane technology
    • Dehe A., Fricke K., Mutamba K., and Hartnagel L.H., 1995, "A piezoresistive GaAs pressure sensors with GaAs/AlGaAs membrane technology," J. Micromech. Microeng., v.5, pp 139.
    • (1995) J. Micromech. Microeng. , vol.5 , pp. 139
    • Dehe, A.1    Fricke, K.2    Mutamba, K.3    Hartnagel, L.H.4
  • 9
  • 10
    • 79956029010 scopus 로고    scopus 로고
    • Piezoelectric Displacement Sensing with a Single Electron Transistor
    • Knobel R., A. N. Cleland A.N., 2002, "Piezoelectric Displacement Sensing with a Single Electron Transistor," Applied Physics Letters, v.81, n.12, pp 2258.
    • (2002) Applied Physics Letters , vol.81 , Issue.12 , pp. 2258
    • Knobel, R.1    Cleland, A.N.2
  • 11
    • 79955997358 scopus 로고    scopus 로고
    • Modification of Optical properties by strain induced piezoelectric effect in ultra high quality V-groove AlGaAs/GaAs single wire
    • Le Q. X., Wang L.X., Ogura M.Guillet T., Voliotis V., and Grousson R., 2002, "Modification of Optical properties by strain induced piezoelectric effect in ultra high quality V-groove AlGaAs/GaAs single wire," Applied Physics Letter, v.80, n.11, pp 1894.
    • (2002) Applied Physics Letter , vol.80 , Issue.11 , pp. 1894
    • Le, Q.X.1    Wang, L.X.2    Ogura, M.3    Guillet, T.4    Voliotis, V.5    Grousson, R.6
  • 12
    • 84903607657 scopus 로고    scopus 로고
    • Design, modeling, and testing of micromachined piezoelectric clamped-clamped beam resonators
    • Orlando Florida
    • Piekarski B., DeVoe D.L., Kaul R., Dubey M., 2000, "Design, modeling, and testing of micromachined piezoelectric clamped-clamped beam resonators," Proc. ASMEIMECE, Orlando Florida, pp 293.
    • (2000) Proc. ASMEIMECE , pp. 293
    • Piekarski, B.1    Devoe, D.L.2    Kaul, R.3    Dubey, M.4
  • 13
    • 0034833239 scopus 로고    scopus 로고
    • Piezoelectric thin film micromechanical beam resonators
    • DeVoe D.L., 2001 "Piezoelectric thin film micromechanical beam resonators," Sensors and Actuators, v.A88, pp 263.
    • (2001) Sensors and Actuators , vol.A88 , pp. 263
    • Devoe, D.L.1
  • 14
    • 0001167021 scopus 로고    scopus 로고
    • Morphology Analysis in Localized Crystal Growth and Dissolution
    • Shaw W.D., 1997, "Morphology Analysis in Localized Crystal Growth and Dissolution," Journal of Crystal Growth, v.47, pp 509.
    • (1997) Journal of Crystal Growth , vol.47 , pp. 509
    • Shaw, W.D.1
  • 17
    • 0026765051 scopus 로고
    • A comparative study of wet and dry selectivity etching of processes for GaAs/AlGaAs/InGaAs pseudornorphic MODFETs
    • Tong M., Ballegeer G.D., Ketterson A., Roan J.E., Cheng Y.K. and Adesida I., 1992, "A comparative study of wet and dry selectivity etching of processes for GaAs/AlGaAs/InGaAs pseudornorphic MODFETs," J. of Electronics Materials, v.21, n.1, pp 9.
    • (1992) J. of Electronics Materials , vol.21 , Issue.1 , pp. 9
    • Tong, M.1    Ballegeer, G.D.2    Ketterson, A.3    Roan, J.E.4    Cheng, Y.K.5    Adesida, I.6
  • 19
    • 0001456029 scopus 로고    scopus 로고
    • Microstractral evidence on direct contact of Au/Ge/Ni/Au ohmic metals on InGaAs channel in pseudomorphic high electron mobility transistor with undoped cap layer
    • Lee J., Kim Y.T., and Lee J.Y., 1998, "Microstractral evidence on direct contact of Au/Ge/Ni/Au ohmic metals on InGaAs channel in pseudomorphic high electron mobility transistor with undoped cap layer," Applied Physics Letter, v.73, n. 12, pp 1670.
    • (1998) Applied Physics Letter , vol.73 , Issue.12 , pp. 1670
    • Lee, J.1    Kim, Y.T.2    Lee, J.Y.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.