Enhancement of silicon etching rate in XeF 2 ambient in the presence of activated polymer

Applied Surface Science

Volumn 228, Issue 1-4, 2004, Pages 227-232

  Knizikevicius R ^a  

^a KAUNAS UNIVERSITY OF TECHNOLOGY   (Lithuania)

Author keywords

Etching; Silicon; XeF 2

Indexed keywords

ADSORPTION; BINDING ENERGY; ETCHING; ION BEAMS; ION BOMBARDMENT; MATHEMATICAL MODELS; REACTION KINETICS; SILICON; SPUTTERING; SURFACE ROUGHNESS; VACUUM;

CHEMICAL ETCHING; ENERGY DISTRIBUTION; PHYSICAL SPUTTERING; XEF2;

XENON;

EID: 1942517784     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.01.016     Document Type: Article

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