Ge-doped SiO 2 glass films prepared by plasma enhanced chemical vapor deposition for planar waveguides

Applied Surface Science

Volumn 228, Issue 1-4, 2004, Pages 271-276

  Lee, Jeong Woo ^a   Kim, Sang Sub ^a   Lee, Byung Taek ^a   Moon, Jong Ha ^a  

^a Chonnam National University   (South Korea)

Author keywords

Optical waveguide; Planar lightwave circuit; Plasma enhanced chemical vapor deposition; SiO 2 film

Indexed keywords

ATOMIC FORCE MICROSCOPY; DOPING (ADDITIVES); OPTICAL WAVEGUIDES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAPID THERMAL ANNEALING; REFRACTIVE INDEX; SILICON WAFERS; SURFACE ROUGHNESS; THERMAL EFFECTS;

CLADDING LAYERS; FLAME HYDROLYSIS DEPOSITION (FHD); PLANAR LIGHWAVE CIRCUIT (PLC); SIO2 FILM;

FUSED SILICA;

EID: 1942517765     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.01.013     Document Type: Article

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