Sensitive detection of defects in α and β SiC by Raman scattering

Materials Science Forum

Volumn 389-393, Issue 1, 2002, Pages 629-632

  Nakashima, S ^a,b   Nakatake, Y ^b   Ishida, Y ^c   Takahashi, T ^c   Okumura, H ^c  

^a R&D Association for Future Electron Devices   (Japan)

^b UNIVERSITY OF MIYAZAKI   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Defects; LO phonon plasmon coupled mode; Raman scattering; TO bands

Indexed keywords

ELECTRIC PROPERTIES; EPITAXIAL GROWTH; FILM GROWTH; PHONONS; RAMAN SCATTERING; SILICON CARBIDE; CARRIER MOBILITY; DEFECTS; PLASMONS;

DEPTH DISTRIBUTION; LO PHONON PLASMON COUPLED MODE; MACRO DEFECTS; TO BANDS; 3C-SIC FILMS; LO-PHONON-PLASMON; MACRODEFECTS; RAMAN IMAGES; SENSITIVE DETECTION; TRANSVERSE OPTICS;

CRYSTAL DEFECTS; SILICON CARBIDE;

EID: 4243789506     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.389-393.629     Document Type: Article

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