Study of Ion Beam Sputtered Mo/Si mirrors for EUV lithography mask: Influence of sputtering gas

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5250, Issue , 2004, Pages 88-98

  Quesnel, E ^a   Teyssier, C ^a   Muffato, V ^a   Thibault, J ^b  

^a CEA LETI   (France)

^b CEA GRENOBLE   (France)

Author keywords

EUV coatings; Ion Beam Sputtering; Lithography mask; Mo; Si

Indexed keywords

CRYSTALLIZATION; DEPOSITION; ION BEAMS; LIGHT REFLECTION; MASKS; MOLYBDENUM; MULTILAYERS; SILICON; SPUTTERING; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY; ULTRAVIOLET RADIATION;

EUV COATINGS; ION BEAM SPUTTERING (IBS); LITHOGRAPHY MASK;

OPTICAL COATINGS;

EID: 1942470565     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.512972     Document Type: Conference Paper

References (8)

1. P.A.Kearney, C.E.Moore, S.I.Tan, S.P.Vernon and R.A.Levesque, J.Vac.Sci.Technol.B 15(6), Nov/Dec 1997, 2452-4.
2. J.Hue, E.Quesnel, V.Muffato, C.Pellé, D.Granier, S.Favier and P.Besson, Microelect. Eng., 61-62 (2002) 203-211.
3. M.Shiraishi, W.Ishiyama, T.Oshino and K.Murakami, Proc. of SPIE Vol.3997 (2000) 620-627.
4. C.Teyssier, E.Quesnel, V.Muffato and P.Schiavone, Microelect. Eng. 61-62 (2002) 241-250.
5. D.Windt, Comput.Phys.12(4) (1998) 360.
6. SRIM-98, version 98,01.
7. W.Lowell Morgan and D.B.Boercker, Appl. Phys. Lett.59(10), 2 sept.1991, 1176-8.
8. S.Bajt, D.G.Stearns and P.Kearney, J.of Appl.Phys., vol.90, N°2, 15 Jul. 2001, 1017-25.