Reduction of defect density on blanks: Application to the extreme ultraviolet lithography

Microelectronic Engineering

Volumn 61-62, Issue , 2002, Pages 203-211

  Hue, J ^a   Quesnel, E ^a   Muffato, V ^a   Pelle C ^a   Granier, D ^a   Favier, S ^b   Besson, P ^b  

^a CEA LETI   (France)

^b STMICROELECTRONICS   (France)

Author keywords

Blank; CCD; Defect; Exposure time; Extreme ultraviolet; Ion beam sputtering; Lithography; Mask; Mo Si mirror; Particle; Scattering

Indexed keywords

CHARGE COUPLED DEVICES; ION BEAM ASSISTED DEPOSITION; LIGHT REFLECTION; MIRRORS; MOLYBDENUM; SEMICONDUCTING SILICON; SPUTTER DEPOSITION; ULTRAVIOLET RADIATION;

EXTREME ULTRAVIOLET LITHOGRAPHY (EUVL); ION BEAM SPUTTERING;

LITHOGRAPHY;

EID: 0036643697     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(02)00499-9     Document Type: Conference Paper

References (7)

1. Photomask and next generation lithography mask technology VII
2. Emerging lithographic technologies V
3. Emerging lithographic technologies IV
4. Photomask and next generation lithography mask technology VII