Analysis of transient response and operating speed of MOBILE

IEEE Transactions on Electron Devices

Volumn 51, Issue 4, 2004, Pages 616-622

  Matsuzaki, Hideaki ^a   Fukuyama, Hiroyuki ^a   Enoki, Takatomo ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Monostable bistable transition logic element (MOBILE); Operating speed; Resonant tunneling diode (RTDs); Transient response

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; MATHEMATICAL MODELS; RESONANT TUNNELING; TRANSIENTS; TUNNEL DIODES;

CLOCK SIGNAL; MONOSTABLE BISTABLE TRANSITION LOGIC ELEMENT; PEAK CURRENT DENSITY; PEAK TO VALLEY CURRENT RATIO; RESONANT TUNNELING DIODES;

DIODE TRANSISTOR LOGIC CIRCUITS;

EID: 1942423728     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.823800     Document Type: Article

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