SPICE model of the resonant-tunnelling diode

Electronics Letters

Volumn 32, Issue 10, 1996, Pages 938-940

  Brown, E R ^a   McMahon, O B ^a   Mahoney, L J ^a   Molvar, K M ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Resonant tunnelling devices; Semiconductor diodes; SPICE

Indexed keywords

CARRIER CONCENTRATION; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; ELECTRON ENERGY LEVELS; ELECTRON TUNNELING; HETEROJUNCTIONS; MATHEMATICAL MODELS; POLYNOMIALS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES;

ALUMINUM GALLIUM ARSENIDE; ELECTRON CURRENT DENSITY; RESONANT TUNNELING DIODE;

SEMICONDUCTOR DIODES;

EID: 0030576259     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960576     Document Type: Article

References (6)

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6. GERJUOY, E., and COON, D.D.: 'Analytic S-matrix considerations and time delay in resonant tunneling', Superlattices Microstruct., 1989, 5, (3), pp. 305-315