Characteristics of polycrystalline silicon thin films prepared by pulsed ion-beam evaporation

Surface and Coatings Technology

Volumn 169-170, Issue , 2003, Pages 636-638

  Yang, Sung Chae ^a   Fazlat, Ali ^a   Suematsu, Hisayuki ^a   Jiang, Weihua ^a   Yatsui, Kiyoshi ^a  

^a NAGAOKA UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

High crystallinity; High deposition rate; Ion beam evaporation; Polycrystalline silicon; Scherrer's formula

Indexed keywords

CRYSTALLIZATION; GRAIN SIZE AND SHAPE; HEATING; POLYCRYSTALLINE MATERIALS; POLYSILICON;

PULSED ION BEAM EVAPORATION;

THIN FILMS;

COATING; CRYSTALLIZATION; EVAPORATION; FILM; SURFACE TREATMENT;

EID: 19244386761     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0257-8972(03)00090-2     Document Type: Article

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