Characterization of bulk microdefects in Ge single crystals

Journal of Applied Physics

Volumn 96, Issue 11, 2004, Pages 6164-6168

  Poelman, D ^a,b,c   De Gryse, O ^a,b,c   De Roo, N ^a,b,c   Janssens, O ^a,b,c   Clauws, P ^a,b,c   Bras, W ^b,c   Dolbnya, I P ^b,c   Romandic, I ^c  

^a GHENT UNIVERSITY   (Belgium)

^b EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

^c UMICORE   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; CRYSTAL DEFECTS; CRYSTAL GROWTH; DIFFUSION IN SOLIDS; GERMANIUM; REFLECTOMETERS; X RAY SCATTERING; DIFFUSION; ENERGY GAP; SILICON WAFERS;

CZOCHRALSHI GROWTH; MICRODEFECTS; SCANNING LASER REFLECTOMETRY; SINGLE-CRYSTAL WAFERS; BAND GAPS;

SINGLE CRYSTALS;

EID: 19144364965     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1804615     Document Type: Article

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