Interface properties and deep levels in InGaAsN/GaAs and GaAsN/GaAs heterojunctions

Solid-State Electronics

Volumn 46, Issue 12, 2002, Pages 2141-2146

  Polyakov, A Y ^a   Smirnov, N B ^a   Govorkov, A V ^a   Botchkarev, Andrei E ^b   Nelson, Nicole N ^b   Fahmi, M M E ^b   Griffin, James A ^b   Khan, Arif ^b   Noor Mohammad, S ^b   Johnstone, D K ^c   Bublik, V T ^d   Chsherbatchev, K D ^d   Voronova, M I ^d  

^a INSTITUTE OF RARE METALS   (Russian Federation)

^b Howard University   (United States)

^c AIR FORCE OFFICE OF SCIENTIFIC RESEARCH   (United States)

^d NATIONAL UNIVERSITY OF SCIENCE AND TECHNOLOGY MISIS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CARRIER CONCENTRATION; CURRENT VOLTAGE CHARACTERISTICS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC SPACE CHARGE; FILM GROWTH; INTERFACES (MATERIALS); SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EPITAXIAL FILMS;

HETEROJUNCTIONS;

EID: 0036890011     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00177-6     Document Type: Article

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