Accurate First-Principles Detailed-Balance Determination of Auger Recombination and Impact Ionization Rates in Semiconductors

Physical Review Letters

Volumn 89, Issue 19, 2002, Pages

  Picozzi, S ^a   Asahi, R ^b   Geller, C B ^c   Freeman, A J ^d  

^a UNIVERSITY OF L'AQUILA   (Italy)

^b Rd Management Section   (Japan)

^c BETTIS ATOMIC POWER LABORATORY   (United States)

^d NORTHWESTERN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; FERMI LEVEL; IMPACT IONIZATION; OPTIMIZATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

AUGER RECOMBINATION; COMPUTATIONAL FORMALISM; FERMI GOLDEN RULE;

AUGER ELECTRON SPECTROSCOPY;

EID: 16444382481     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.89.197601     Document Type: Article

References (33)

1. C.B. Geller, W. Wolf, S. Picozzi, A. Continenza, R. Asahi, W. Mannstadt, A.J. Freeman, and E. Wimmer, Appl. Phys. Lett.10.1063/1.1383282 79, 368 (2001).
2. A. Franceschetti and A. Zunger, Nature (London)10.1038/46995 402, 60 (1999).
3. P.T. Landsberg, Recombination in Semiconductors (Cambridge University Press, Cambridge, 1991).
4. See S. Picozzi, R. Asahi, C.B. Geller, A. Continenza, and A.J. Freeman, Phys. Rev. B10.1103/PhysRevB.65.113206, 65, 113206 (2002), where we report further computational details, not repeated here.
5. W. Kohn and L.J. Sham, Phys. Rev. 140, A1113 (1965);
6. P. Hohenberg and W. Kohn, Phys. Rev. 136, B864 (1964).
7. D.B.Laks, G.F.Neumark, A. Hangleiter, and S.T. Pantelides, Phys. Rev. Lett.10.1103/PhysRevLett.61.1229 61, 1229 (1988).
8. N. Sano and A. Yoshii, Phys. Rev. B10.1103/PhysRevB.45.4171 45, 4171 (1992).
9. G. Cappellini, R. Del Sole, L. Reining, and F. Bechstedt, Phys. Rev. B10.1103/PhysRevB.47.9892 47, 9892 (1993).
10. D. Harrison, R.A. Abram, and S. Brand, J. Appl. Phys.10.1063/1.370657 85, 8178 (1999);
11. D. HarrisonR.A. AbramS. BrandJ. Appl. Phys.10.1063/1.370658 85, 8186 (1999).
12. B.M. Bylander and L. Kleinman, Phys. Rev. B10.1103/PhysRevB.41.7868 41, 7868 (1990).
13. A. Seidl, A. Gorling, P. Vogl, J.A. Majewski, and M. Levy, Phys. Rev. B10.1103/PhysRevB.53.3764 53, 3764 (1996).
14. R. Asahi, W. Mannstadt, and A.J. Freeman, Phys. Rev. B10.1103/PhysRevB.59.7486 59, 7486 (1999);
15. R. AsahiW. MannstadtA.J. FreemanPhys. Rev. B10.1103/PhysRevB.62.255262, 2552 (2000).
16. E. Wimmer, H. Krakauer, M. Weinert, and A.J. Freeman, Phys. Rev. B10.1103/PhysRevB.24.864 24, 864 (1981).
17. M. Takeshima, Phys. Rev. B10.1103/PhysRevB.23.6625 23, 6625 (1981).
18. R.J. Dutta and N.K. Nelson, J. Appl. Phys. 85, 74 (1982).
19. M. Takeshima, Phys. Rev. B10.1103/PhysRevB.28.2039 28, 2039 (1983);
20. M. TakeshimaPhys. Rev. B10.1103/PhysRevB.29.199329, 1993 (1984).
21. J. Bude, K. Hess, and G.J. Iafrate, Phys. Rev. B 45, 10?958 (1992).
22. S. Krishnamurthy, A. Sher, and A.B. Chen, J. Appl. Phys.10.1063/1.366412 82, 5540 (1997).
23. W.K. Metzger et alM.W. WanlassR.J. EllingsonR.K. AhrenkielJ.J. Carapella, Appl. Phys. Lett.10.1063/1.1418032 79, 3272 (2001).
24. E. Marin et al, I. RiechP. DiazJ.J. AlvaradoR. BaqueroH. VargasA. Cruz-OreaM. Vargas, J. Appl. Phys.10.1063/1.367022 83, 2604 (1998).
25. U. Strauss, W.W. Rühle, and K. Köhler, Appl. Phys. Lett.10.1063/1.108817 62, 55 (1993).
26. G.B. Lush et alH.F. MacMillanB.M. KeyesD.H. LeviM.R. MellochR.K. AhrenkielM.S. Lundstrom, J. Appl. Phys.10.1063/1.351704 72, 1436 (1992).
27. A. Haug, J. Phys. C10.1088/0022-3719/16/21/017 16, 4159 (1980).
28. M. Takeshima, Jpn. J. Appl. Phys. 22, 491 (1983).
29. C.H. Henry, R.A. Logan, F.R. Merritt, and C.G. Betha, Electron. Lett. 20, 358 (1984).
30. R.K. Ahrenkiel, R. Ellingson, S. Johnston, and M. Wanlass, Appl. Phys. Lett.10.1063/1.121669 72, 3470 (1998).
31. M. Takeshima, J. Appl. Phys. 56, 691 (1984).
32. W. Bardyszewski and D. Yevick, J. Appl. Phys.10.1063/1.335909 58, 2713 (1985).
33. W. Van Roosbroeck and W. Shockley, Phys. Rev.10.1103/PhysRev.94.1558 94, 1558 (1954).