The concept of effective electronic stopping power for modelling the damage cross-section in refractory oxides irradiated by GeV ions or MeV clusters

Radiation Effects and Defects in Solids

Volumn 145, Issue 1-2, 1998, Pages 1-27

  Canut, B ^a   Ramos, S M M ^a  

^a UNIVERSITÉ LYON 1   (France)

Author keywords

Damage cross section; Effective electronic stopping power; GeV ions; Irradiation; MeV clusters; Refractory oxides; Universal scattering

Indexed keywords

ALUMINA; COMPUTATIONAL METHODS; CRYSTAL DEFECTS; FULLERENES; ION BOMBARDMENT; LITHIUM NIOBATE; MATHEMATICAL MODELS; RADIATION DAMAGE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SENSITIVITY ANALYSIS; SPECTROMETRY; URANIUM;

EFFECTIVE ELECTRONIC STOPPING POWER;

SINGLE CRYSTALS;

EID: 0031638467     PISSN: 10420150     EISSN: None     Source Type: Journal    
DOI: 10.1080/10420159808220019     Document Type: Article

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