Influence of the wet Re-oxidation procedure on inversion mobility of 4H-SiC MOSFETs

Materials Science Forum

Volumn 389-393, Issue , 2002, Pages 1049-1052

  Kosugi, R ^a,b   Okamoto, M ^a,b   Suzuki, S ^b,c   Senzaki, J ^a,b   Harada, S ^a,b,c   Fukuda, K ^a,b   Arai, K ^a,b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY   (Japan)

^c R&D Association for Future Electron Devices   (Japan)

Author keywords

MOSFETs; Pyrogenic Re oxidation annealing (ROA); Water vapor content

Indexed keywords

METALS; MOS DEVICES; MOSFET DEVICES; OXIDATION; OXIDE SEMICONDUCTORS; RHENIUM COMPOUNDS; WATER VAPOR; WIDE BAND GAP SEMICONDUCTORS; ANNEALING; ELECTRON MOBILITY; FABRICATION; ION IMPLANTATION; SILICON CARBIDE;

4H-SIC MOSFETS; CHANNEL MOBILITY; FIELD EFFECTS; INVERSION CHANNELS; MOSFETS; RE-OXIDATION; TIME-PERIODS; WATER VAPOR CONTENTS; RE-OXIDATION ANNEALING (ROA);

SILICON CARBIDE; MOSFET DEVICES;

EID: 18744420448     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.389-393.1049     Document Type: Conference Paper

References (5)

1. R. Schomer, R Friedrichs, D. Peters and D. Stephani, IEEE Electron Device Lett. 20 (1999), p.241.
2. L. A. Lipkin, and J. W. Palmour, J. Electron. Mater. 25 (1996), p909.
3. G. Y. Chung, C. C. Tin, J. R. Williams, K. McDonald, R. K. Chanana, R. A. Weller, S. T. Pantelides, L. C. Feldman, O. W. Holland, M. K. Das and J. W. Palmour, IEEE Electron Device Lett. 22 (2001), p 176.
4. G. G. Jemigan, R. E. Stahlbush and N. S. Saks, Appl. Phys. Lett. 77, (2000), p 1437.
5. K. C. Chang, N. T. Nuhfer, L. M. Porter and Q. Wahab, Appl. Phys. Lett. 77 (2000), p2186.