Experimental and molecular dynamics study on crystallization of amorphous silicon under external fields

Journal of Physics D: Applied Physics

Volumn 38, Issue 10, 2005, Pages 1511-1517

  Park, S H ^a   Kim, H J ^a   Kang, K H ^a   Lee, J S ^b   Choi, Y K ^c   Kwon, O M ^d  

^a Hong Ik University   (South Korea)

^b Seoul National University   (South Korea)

^c Chung Ang University   (South Korea)

^d Korea University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPUTER SIMULATION; CRYSTALLIZATION; MAGNETIC FIELDS; MATHEMATICAL MODELS; MOLECULAR DYNAMICS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POTENTIAL ENERGY;

MOLECULAR DYNAMICS SIMULATIONS; MOLECULAR POTENTIAL ENERGIES; SOLID-PHASE CRYSTALLIZATION (SPC); TERSOFF POTENTIAL;

AMORPHOUS SILICON;

EID: 18744410445     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/38/10/004     Document Type: Article

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