40-Gb/s optical receiver IC chipset - including a transimpedance amplifier, a differential amplifier, and a decision circuit - using GaAs-based HBT technology

IEEE MTT-S International Microwave Symposium Digest

Volumn 1, Issue , 2002, Pages 87-90

  Amamiya, Y ^a   Suzuki, Y ^a   Kawanaka, M ^a   Hosoya, K ^a   Yamazaki, Z ^a   Mamada, M ^a   Takahashi, H ^a   Wada, S ^a   Kato, T ^a   Ikenaga, Y ^a   Tanaka, S ^a   Takeuchi, T ^a   Hida, H ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); FIBER OPTIC NETWORKS; FLIP FLOP CIRCUITS; FREQUENCY RESPONSE; HETEROJUNCTION BIPOLAR TRANSISTORS; SEMICONDUCTING GALLIUM ARSENIDE;

DECISION CIRCUIT; EYE DIAGRAM; OPTICAL RECEIVER; TRANSIMPEDANCE AMPLIFIER;

INTEGRATED CIRCUIT LAYOUT;

EID: 0036073035     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. High-fmax AlGaAs/InGaAs and AlGaAs/GaAs HBT's with p+/p regrown base
2. 50-GHz bandwidth baseband amplifiers using GaAs-based HBT's
3. 40-GHz frequency dividers with reduced power dissipation fabricated using high-speed small-emitter-area AlGaAs/InGaAs HBTs
4. A 60-GHz dynamic frequency divider IC using AlGaAs/InGaAs HBTs with p+ regrown extrinsic base layers
5. High-reliability InGaP/GaAs HBTs fabricated by self-aligned process
6. Migration from an AlGaAs to an InGaP emitter HBT IC process for improved reliability