Electrical properties of 1.55 μm sensitive ion-irradiated Ingaas with subpicosecond carrier lifetime

Electronics Letters

Volumn 39, Issue 8, 2003, Pages 681-682

  Mangeney, J ^a   Joulaud, L ^a   Decobert, J ^a   Lourtioz, J M ^a   Perrossier, J L ^a   Cabaret, S ^a   Crozat, P ^a  

^a UNIVERSITÉ PARIS SACLAY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; HALL EFFECT; ION BOMBARDMENT; PHOTOCONDUCTING DEVICES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

CARRIER LIFETIMES;

CARRIER CONCENTRATION;

EID: 0038004115     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20030441     Document Type: Article

References (7)

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