Platinum contamination issues in ferroelectric memories

Journal of Applied Physics

Volumn 92, Issue 6, 2002, Pages 3257-3265

  Boubekeur, H ^a   Mikolajick, T ^a   Pamler, W ^a   Hopfner J ^a   Frey, L ^b   Ryssel, H ^b  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b FRAUNHOFER INSTITUTE FOR INTEGRATED CIRCUITS IIS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; ANNEALING TEMPERATURES; CONCENTRATION LEVELS; CONSTANT CURRENT; CONTAMINATION RISKS; CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; DEFECT-FREE; DETRIMENTAL EFFECTS; DEVICE DESIGN; DEVICE PERFORMANCE; ENERGY DISPERSIVE X RAY SPECTROSCOPY; FERROELECTRIC MEMORY; GATE OXIDE DEGRADATION; GETTERING; METAL OXIDE SEMICONDUCTOR STRUCTURES; MOS STRUCTURE; PHOSPHORUS-DOPED; PLATINUM ELECTRODES; PROCESSING CONDITION; PT ATOMS; PT ELECTRODE; REDEPOSITION; RUTHERFORD BACK-SCATTERING SPECTROMETRY; SECONDARY ION MASS SPECTROSCOPY; SELECT TRANSISTOR;

CONTAMINATION; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEGRADATION; DOPING (ADDITIVES); FERROELECTRIC DEVICES; PHOSPHORUS; POLYSILICON; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; TRANSMISSION ELECTRON MICROSCOPY; X RAY SPECTROSCOPY;

PLATINUM;

EID: 18644378464     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1500414     Document Type: Article

References (47)

1. J. F. Scott and C. A. Araujo, Science 246, 1400 (1989). sciSCIEAS0036-8075
2. C. A. Paz de Araujo, J. D. Cuchiaro, L. D. McMillan, M. C. Scott, and J. F. Scott, Nature (London) 374, 627 (1995). natNATUAS0028-0836
3. S. Y. Cha, H. C. Lee, W. J. Lee, and H. G. Kim, Jpn. J. Appl. Phys., Part 1 34, 5220 (1995). jjbJAPNDE0021-4922
4. H. H. Woodbury and G. W. Ludwig, Phys. Rev. 126, 466 (1962). phrPHRVAO0031-899X
5. M. Conti and A. Panchieri, Alta Freq. 40, 544 (1971). alfALFRAJ0002-6557
6. Y. K. Kwon, T. Ishikawa, and H. Kumano, J. Appl. Phys. 61, 1055 (1987). japJAPIAU0021-8979
7. A. A. Gill, N. Baber, and M. Z. Iqbal, J. Appl. Phys. 67, 1130 (1990). japJAPIAU0021-8979
8. J.-U. Sachse, E. Ö. Sveinbjörnsson, W. Jost, and J. Weber, Appl. Phys. Lett. 70, 1584 (1997). aplAPPLAB0003-6951
9. B. Deng and H. Kuwano, Jpn. J. Appl. Phys., Part 1 34, 4587 (1995). jjbJAPNDE0021-4922
10. H. H. Busta and H. A. Waggener, J. Electrochem. Soc. 124, 1424 (1977). jesJESOAN0013-4651
11. M. Miyazaki, M. Sano, S. Sumita, and N. Fujino, Jpn. J. Appl. Phys., Part 2 30, L295 (1991). jjcJAPLD80021-4922
12. M. L. Polignano, G. F. Cerofolini, H. Bender, and C. Claeys, J. Appl. Phys. 64, 869 (1988). japJAPIAU0021-8979
13. R. W. Gregor and J. W. H. Stinebaugh, J. Appl. Phys. 64, 2079 (1988). japJAPIAU0021-8979
14. B. O. Kolbesen and H. Cerva, Phys. Status Solidi B 222, 303 (2000). psbPSSBBD0370-1972
15. V. Higgs, M. Goulding, A. Brinklow, and P. Kightley, Appl. Phys. Lett. 60, 1369 (1992). aplAPPLAB0003-6951
16. H. Morinaga, M. Suyama, and T. Ohmi, J. Electrochem. Soc. 141, 2834 (1994). jesJESOAN0013-4651
17. T. Oku, E. Kawakami, M. Uekubo, K. Takahiro, S. Yamaguchi, and M. Murakami, Appl. Surf. Sci. 99, 265 (1996). asuASUSEE0169-4332
18. M. Mört, G. Schindler, W. Hartner, I. Kasko, M. Kastner, T. Mikolajick, C. Dehm, and R. Waser, Integr. Ferroelectr. 30, 235 (2000). itfIFEREU1058-4587
19. F. C. Frank and D. Turnbull, Phys. Rev. 104, 617 (1956). phrPHRVAO0031-899X
20. U. Gösele, W. Frank, and A. Seeger, Appl. Phys. 23, 361 (1980). aphAPHYCC0340-3793
21. H. Zimmermann and H. Ryssel, Appl. Phys. A: Solids Surf. 55, 121 (1992). apaAPSFDB0721-7250
22. M. Jacob, P. Pichler, H. Ryssel, and R. Fasler, J. Appl. Phys. 82, 182 (1997). japJAPIAU0021-8979
23. S. Ogushi, S. Sadamitsu, K. Marsden, Y. Koike, and M. Sano, Jpn. J. Appl. Phys., Part 1 36, 6601 (1997). jjbJAPNDE0021-4922
24. P. Rohr, J. J. Grob, and P. Siffert, Nucl. Instrum. Methods Phys. Res. B 80/81, 640 (1993). nibNIMBEU0168-583X
25. V. Raineri, P. G. Fallica, G. Percolla, A. Battaglia, M. Barbagallo, and S. U. Campisano, J. Appl. Phys. 78, 3727 (1995). japJAPIAU0021-8979
26. J. Partanen, T. Tuomi, M. Tilli, S. Hahn, C.-C. D. Wong, and F. A. Ponce, J. Mater. Res. 4, 623 (1989). jmrJMREEE0884-2914
27. Y. Hayamizu, S. Ushio, and T. Takenaka, in Defect Engineering in Semiconductor Growth, Processing and Device Technology, edited by S. Ashok, J. Chevallier, K. Sumino, and E. Weber (Materials Research Society, Pittsburgh, 1992), p. 1005.
28. S. M. Myers, M. Seibt, and W. Schröter, J. Appl. Phys. 88, 3795 (2000). japJAPIAU0021-8979
29. H. Hieslmair, S. A. McHugo, A. A. Istratov, and E. R. Weber, in Properties of Crystalline Silicon, edited by R. Hull, EMIS DataReviews Ser. 20 (INSPEC, Short Run Press, Exeter, 1999), Chap. 15, pp. 775-808.
30. H. Boubekeur, J. Höpfner, T. Mikolajick, C. Dehm, L. Frey, and H. Ryssel, J. Electrochem. Soc. 147, 4297 (2000). jesJESOAN0013-4651
31. D. A. Ramappa and W. B. Henley, J. Electrochem. Soc. 146, 2258 (1999). jesJESOAN0013-4651
32. W. B. Henly, L. Jastrzebski, and N. F. Haddad, J. Non-Cryst. Solids 185, 134 (1995). jncJNCSBJ0022-3093
33. M. Miyashita, T. Tusga, K. Makihara, and T. Ohmi, J. Electrochem. Soc. 139, 2133 (1992). jesJESOAN0013-4651
34. T. Futatsuki, in Ultra Clean Surface Processing of Silicon Wafers, edited by T. Hattori (Springer, Berlin 1998), p. 57.
35. K. Honda, A. Ohsawa, and N. Toyokura, Appl. Phys. Lett. 46, 582 (1985). aplAPPLAB0003-6951
36. H. Wendt, H. Cerva, V. Lehmann, and W. Pamler, J. Appl. Phys. 65, 2402 (1989). japJAPIAU0021-8979
37. K. Graff, Metal Impurities in Silicon-Device Fabrication (Springer, Berlin, 1995).
38. A. Correia, B. Pichaud, A. Lhorte, and J. B. Quoirin, J. Appl. Phys. 79, 2145 (1996). japJAPIAU0021-8979
39. A. Correia, B. Pichaud, A. Lhorte, and J. B. Quoirin, Mater. Sci. Technol. 11, 691 (1995). mttMSCTEP0267-0836
40. M. Seibt, A. Döller, V. Kveder, A. Sattler, and A. Zozime, Phys. Status Solidi B 222, 327 (2000). psbPSSBBD0370-1972
41. H. Kato, S. Mori, and H. Kuwano, J. Appl. Phys. 56, 1160 (1984). japJAPIAU0021-8979
42. B. Deng, C. Shu, and H. Kuwano, Jpn. J. Appl. Phys., Part 1 34, 2969 (1995). jjbJAPNDE0021-4922
43. B. Deng, C. Shu, and H. Kuwano, Jpn. J. Appl. Phys., Part 2 34, L879 (1995). jjcJAPLD80021-4922
44. M. Liehr, H. Dallaporta, and J. E. Lewis, Appl. Phys. Lett. 53, 589 (1988). aplAPPLAB0003-6951
45. T. Bearda, S. de Gendt, L. Loewenstein, M. Knotter, P. Mertens, and M. Heyns, Fourth International Symposium on Ultra Clean Processing of Silicon Surfaces (Scitec, Zuerich-Uetikon, Switzerland, 1999), p. 11.
46. P. W. Mertens et al., in Defects in Silicon III, edited by T. Abe, M. Bullis et al. The Electrochem. Soc. Symp. Ser. The Electrochemical Society, Pennington, NJ, 1999, Vol. PV 99-1, p. 401.
47. H. Boubekeur, T. Mikolajick, N. Nagel, C. Dehm, W. Pamler, A. Bauer, L. Frey, and H. Ryssel, Integr. Ferroelectr. 37, 75 (2001). itfIFEREU1058-4587