Polarized ultraviolet Raman spectroscopy of β-Si 3N 4

Journal of Applied Physics

Volumn 92, Issue 6, 2002, Pages 3103-3106

  Vogelgesang, R ^a,b   Grimsditch, M ^a   Wallace, J S ^c  

^a ARGONNE NATIONAL LABORATORY   (United States)

^b MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^c NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EXTINCTION RATIOS; OPTICAL PHONON MODES; RAMAN ACTIVE MODES; RESONANCE CONDITION; THEORETICAL RESULT; ULTRA VIOLET EXCITATION; ULTRAVIOLET RAMAN SPECTROSCOPY;

RAMAN SCATTERING; RAMAN SPECTROSCOPY;

SILICON;

EID: 18644364931     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1503164     Document Type: Article

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