Stress dependence of the raman spectrum of β-silicon nitride

Journal of the American Ceramic Society

Volumn 79, Issue 3, 1996, Pages 781-784

  Sergo, Valter ^a,e   Pezzotti, Giuseppe ^b,e   Katagiri, Gen ^c   Muraki, Naoki ^c   Nishida, Toshihiko ^d,e  

^a UNIVERSITY OF TRIESTE   (Italy)

^b TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

^c TORAY RESEARCH CENTER INC   (Japan)

^d KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

^e AMERICAN CERAMIC SOCIETY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CRYSTAL LATTICES; CRYSTALLOGRAPHY; DENSIFICATION; FREQUENCIES; MATHEMATICAL TECHNIQUES; RAMAN SPECTROSCOPY; SOLID SOLUTIONS; STRESSES;

CRYSTALLOGRAPHIC LATTICE; LOW FREQUENCY SHIFT BANDS; PIEZO-SPECTROSCOPIC COEFFICIENTS; REPEATED INDEX NOTATION; STRESS DEPENDENCE; TAYLOR SERIES EXPANSION;

SILICON NITRIDE;

EID: 0030107013     PISSN: 00027820     EISSN: None     Source Type: Journal    
DOI: 10.1111/j.1151-2916.1996.tb07944.x     Document Type: Article

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