Introduction of color center into β-Si3N4 single crystal

Journal of Luminescence

Volumn 87, Issue , 2000, Pages 574-576

  Ye, J ^a   Furuya, K ^b   Misono, Y ^a   Matsuo, K ^b   Munakata, F ^b   Ishikawa, I ^a   Akimune, Y ^b  

^a NISSAN ARC LTD   (Japan)

^b NISSAN MOTOR CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; COLOR CENTERS; CRYSTAL GROWTH FROM MELT; CRYSTAL IMPURITIES; ENERGY GAP; LIGHT ABSORPTION; LIGHT EMITTING DIODES; OXYGEN; SEMICONDUCTOR MATERIALS; SINGLE CRYSTALS;

BAND GAP; IMPURITY LEVEL;

SILICON NITRIDE;

EID: 0033747285     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-2313(99)00299-9     Document Type: Article

References (4)

1. Iqbal A., Jackson W.B., Tsai C.C., Allen J.W., Bates C.W. Jr. J. Appl. Phys. 61:1987;2947.
2. Wang C., Pan X., Gu H., Gerd Dusher, Hoffmann M.J., Cannon R.M., Ruhle M. J. Am. Ceram. Soc. 80:1997;1397.
3. Furuya K., Matsuo K., Munakata F., Akimune Y., Ye J., Yamamoto Y., Ishikawa I. J. Mater. Res. 14:1999;1690.
4. Munakata F., Matsuo K., Furuya K., Akimune Y., Ye J., Ishikawa I. Appl. Phys. Lett. 65:1999;3998.