Dc-electric-field-induced second-harmonic interferometry of the Si(111)-SiO2 interface in Cr-SiO2-Si MOS capacitor

Physical Review B - Condensed Matter and Materials Physics

Volumn 68, Issue 7, 2003, Pages

  Dolgova, V ^a   Fedyanin, A ^a   Aktsipetrov, A ^a  

^a MOSCOW STATE UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CHROMIUM; SILICON DIOXIDE;

ARTICLE; CALCULATION; CHEMICAL STRUCTURE; ELECTRIC FIELD; INTERFEROMETRY; NEODYMIUM LASER; SEMICONDUCTOR;

EID: 18544408215     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.68.073307     Document Type: Article

References (25)

1. C.H. Lee, R.K. Chang, and N. Bloembergen, Phys. Rev. Lett. 18, 167 (1967).
2. G. Lüpke, Surf. Sci. Rep. 35, 75 (1999).
3. O.A. Aktsipetrov and E.D. Mishina, Sov. Phys. Dokl. 29, 37 (1984);
4. P.R. Fischer, J.L. Daschbach, and G.L. Richmond, Chem. Phys. Lett. 218, 200 (1994);
5. S.A. Mitchell, T.R. Ward, D.D.M. Wayner, and G.P. Lopinski, J. Phys. Chem. B 106, 9873 (2002).
6. O.A. Aktsipetrov, A.A. Fedyanin, A.V. Melnikov, E.D. Mishina, A.N. Rubtsov, M.H. Anderson, P.T. Wilson, M. ter Beek, X.F. Hu, J.I. Dadap, and M.C. Downer, Phys. Rev. B 60, 8924 (1999).
7. O.A. Aktsipetrov, A.A. Fedyanin, V.N. Golovkina, and T.V. Murzina, Opt. Lett. 19, 1450 (1994);
8. J.I. Dadap, X.F. Hu, M.H. Anderson, M.C. Downer, J.K. Lowell, and O.A. Aktsipetrov, Phys. Rev. B 53, R7607 (1996);
9. O.A. Aktsipetrov, A.A. Fedyanin, E.D. Mishina, A.N. Rubtsov, C.W. van Hasselt, M.A.C. Devillers, and Th. Rasing, Phys. Rev. B 54, 1825 (1996).
10. G. Lüpke, C. Meyer, C. Ohlhoff, H. Kurz, S. Lehmann, and G. Marowsky, Opt. Lett. 20, 1997 (1995);
11. A. Nahata, J.A. Misewich, and T.F. Heinz, Appl. Phys. Lett. 69, 746 (1996).
12. C. Ohlhoff, G. Lüpke, C. Meyer, and H. Kurz, Phys. Rev. B 55, 4596 (1997).
13. P.T. Wilson, Y. Jiang, O.A. Aktsipetrov, E.D. Mishina, and M.C. Downer, Opt. Lett. 24, 496 (1999).
14. J.I. Dadap, J. Shan, A.S. Weling, J.A. Misewich, A. Nahata, and T.F. Heinz, Opt. Lett. 24, 1059 (1999);
15. J.I. Dadap, J. Shan, A.S. Weling, J.A. Misewich, and T.F. Heinz, Appl. Phys. B: Lasers Opt. 68, 333 (1999).
16. J. Bloch, J.G. Mihaychuk, and H.M. van Driel, Phys. Rev. Lett. 77, 920 (1996).
17. W. Wang, G. Lüpke, M. Di Ventra, S.T. Pantelides, J.M. Gilligan, N.H. Tolk, I.C. Kizilyalli, P.K. Roy, G. Margaritondo, and G. Lucovsky, Phys. Rev. Lett. 81, 4224 (1998).
18. R.K. Chang, J. Ducuing, and N. Bloembergen, Phys. Rev. Lett. 15, 6 (1965);
19. K. Kemnitz, K. Bhattacharyya, J.M. Hicks, G.R. Pinto, K.B. Eisenthal, and T.F. Heinz, Chem. Phys. Lett. 131, 285 (1986).
20. P. Guyot-Sionnest, W. Chen, and Y.R. Shen, Phys. Rev. B 33, 8254 (1986).
21. T.F. Heinz, M.M.T. Loy, and W.A. Thompson, Phys. Rev. Lett. 54, 63 (1985).
22. O.A. Aktsipetrov, A.A. Fedyanin, A.V. Melnikov, J.I. Dadap, X.F. Hu, M.H. Anderson, M.C. Downer, and J.K. Lowell, Thin Solid Films 294, 231 (1997);
23. D. Lim, M.C. Downer, J.G. Ekerdt, N. Arzate, B.S. Mendoza, V.I. Gavrilenko, and R.Q. Wu, Phys. Rev. Lett. 84, 3406 (2000).
24. P. Thiansathaporn and R. Superfine, Opt. Lett. 20, 545 (1995);
25. J. Chen, S. Machida, and Y. Yamanoto, Opt. Lett 23, 676 (1998).