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Volumn 278, Issue 1-4, 2005, Pages 437-442
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Growth of BxAl1-xN layers using decaborane on SiC substrates
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Author keywords
A1. Solubility; A2. Single crystal growth; B1. Nitride; B2. Semiconducting ternary compounds
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Indexed keywords
COMPOSITION EFFECTS;
CRYSTAL GROWTH;
MOLECULAR BEAM EPITAXY;
NITRIDES;
NITROGEN;
PYROLYSIS;
SILICON CARBIDE;
SINGLE CRYSTALS;
SOLUBILITY;
SUBSTRATES;
SURFACE ROUGHNESS;
TERNARY SYSTEMS;
DECARBORANE;
PLASMA-ASSISTED MOLECULAR BEAM EPITAXY;
SEMICONDUCTING TERNARY COMPOUNDS;
SINGLE-CRYSTAL GROWTH;
BORON COMPOUNDS;
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EID: 18544388396
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2005.01.003 Document Type: Conference Paper |
Times cited : (13)
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References (17)
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