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Volumn 278, Issue 1-4, 2005, Pages 437-442

Growth of BxAl1-xN layers using decaborane on SiC substrates

Author keywords

A1. Solubility; A2. Single crystal growth; B1. Nitride; B2. Semiconducting ternary compounds

Indexed keywords

COMPOSITION EFFECTS; CRYSTAL GROWTH; MOLECULAR BEAM EPITAXY; NITRIDES; NITROGEN; PYROLYSIS; SILICON CARBIDE; SINGLE CRYSTALS; SOLUBILITY; SUBSTRATES; SURFACE ROUGHNESS; TERNARY SYSTEMS;

EID: 18544388396     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.01.003     Document Type: Conference Paper
Times cited : (13)

References (17)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.