Combined ab initio quantum chemistry and computational fluid dynamics calculations for prediction of gallium nitride growth

Journal of Crystal Growth

Volumn 279, Issue 3-4, 2005, Pages 369-382

  Sengupta, Debasis ^a   Mazumder, Sandip ^b   Kuykendall, William ^c   Lowry, Samuel A ^a  

^a CFD RESEARCH CORPORATION   (United States)

^b The Ohio State University   (United States)

^c ESI CFD Inc   (United States)

Author keywords

A1. Computer simulation; A1. Growth models; A3. Metalorganic vapor phase epitaxy; B1. Gallium compounds; B1. Nitrides; B2. Semiconducting gallium compounds

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; FILM GROWTH; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; SEMICONDUCTING GALLIUM COMPOUNDS; THIN FILMS;

GAS PHASE; GROWTH MODELS; GROWTH RATES; QUANTUM CHEMISTRY;

COMPUTATIONAL FLUID DYNAMICS;

EID: 18444413564     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.02.036     Document Type: Article

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