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Volumn 3, Issue , 2005, Pages 97-106

Formation and transport properties of Si(111)/β-FeSi2/Si nanocluster structures

Author keywords

Atomic force microscopy; Electrical transport measurements; Epitaxy; Fe; Morphology; Nanocluster materials; Suicides

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; CRYSTAL ORIENTATION; EPITAXIAL GROWTH; IRON COMPOUNDS; LOW ENERGY ELECTRON DIFFRACTION; NANOSTRUCTURED MATERIALS; SEMICONDUCTOR MATERIALS; SUBLIMATION;

EID: 18444396891     PISSN: 13480391     EISSN: 13480391     Source Type: Journal    
DOI: 10.1380/ejssnt.2005.97     Document Type: Article
Times cited : (1)

References (21)
  • 19
    • 0004278609 scopus 로고
    • Cambridge University, Cambridge
    • R. A. Smith, Semiconductors (Cambridge University, Cambridge, 1978).
    • (1978) Semiconductors
    • Smith, R.A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.