Optical and photospectral properties of CrSi2 A-type epitaxial films on Si(111)

Thin Solid Films

Volumn 311, Issue 1-2, 1997, Pages 230-238

  Galkin, N G ^a   Maslov, A M ^b   Konchenko, A V ^a  

^a RUSSIAN ACADEMY OF SCIENCES   (Russian Federation)

^b FAR EASTERN FEDERAL UNIVERSITY   (Russian Federation)

Author keywords

Band structure; Optical properties; Photoconductivity; Silicides

Indexed keywords

BAND STRUCTURE; ELECTRON TRANSITIONS; ENERGY GAP; EPITAXIAL GROWTH; LIGHT ABSORPTION; OPTICAL PROPERTIES; OPTICAL VARIABLES MEASUREMENT; PHOTOCONDUCTIVITY; REFRACTIVE INDEX; SEMICONDUCTING SILICON; SPECTROSCOPY; SPURIOUS SIGNAL NOISE;

CHROMIUM SILICIDE; INTEGRAL PHOTOCONDUCTIVITY SIGNAL; INTERBAND TRANSITIONS; INTRINSIC PHOTOEFFECT; OPTICAL FUNCTIONS;

SEMICONDUCTING FILMS;

EID: 0031367265     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(97)00678-0     Document Type: Article

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