Excitation power dependent photoluminescence of In0.7Ga 0.3As1-xNx quantum dots grown on GaAs (0 0 1)

Journal of Crystal Growth

Volumn 278, Issue 1-4, 2005, Pages 244-248

  Nishikawa, A ^a   Katayama, R ^a   Onabe, K ^a   Hong, Y G ^b   Tu, C W ^b  

^a UNIVERSITY OF TOKYO   (Japan)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

A1. Low dimensional structures; A3. Molecular beam eitaxy; B2. Semiconducting III V materials

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; HEAT CONDUCTION; LASER BEAM EFFECTS; MOLECULAR BEAM EPITAXY; MONOLAYERS; OPTICAL FIBERS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS;

LOW-DIMENSIONAL STRUCTURE; QUANTUM-SIZE EFFECTS; SEMICONDUCTING III-V MATERIALS; THRESHOLD CURRENT DENSITY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 18444389506     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.12.067     Document Type: Conference Paper

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